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IGT4E11 - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IGT4E11, a member of the IGT4D11 Insulated Gate Bipolar Transistor family.

Datasheet Summary

Features

  • Low VCE(SAT) - 2.5V typ @ 10A.
  • Ultra-fast turn-on - 100 ns typical.
  • Polysilicon MOS gate - Voltage controlled turn on/off.
  • High current handling - 10 amps @ 100°C N-.

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Datasheet preview – IGT4E11

Datasheet Details

Part number IGT4E11
Manufacturer GE
File Size 298.11 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet IGT4E11 Datasheet
Additional preview pages of the IGT4E11 datasheet.

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Full PDF Text Transcription

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mTMlJ~~~~ Insulated Gate Bipolar Transistor IGT4D11~E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON} = 0.27 il This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolartransistors. The device design and gate characteristics of the IGT'M Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.
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