MB8117-10 - NMOS Dynamic Random Access Memory

Product Overview

Fujitsu

Part number	MB8117-10
Manufacturer	Fujitsu
File Size	217.03 KB
Description	NMOS Dynamic Random Access Memory
Datasheet	MB8117-10 Datasheet
Additional preview pages of the MB8117-10 datasheet.

The Fujitsu MB8117 is a fully decoded, dynamic NMOS random access memory organized as 16,384 one-bit words.

16,384 x 1 RAM, 16 pin package e Silicon-gate, Double Poly NMOS single-transistor cell.
Address access time 100 ns max (MB8117-10) 120 ns max (MB8117-12).
Cycle time, 235 ns min (MB8117-10) 270 ns min (MB8117-12).
Low power: 182 mW max (MB8117-10) 160 mW max (MB8117-12) 19_5 mW max (Standby).
+5V single power supply, :t 10% tolerance.
On-chip substrate bias generator.
All Inputs TTL compatible, low capacitive load.
Thre. s.

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Published: Nov 16, 2025 |