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FGW25N120W - Discrete IGBT

General Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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http://www.fujielectric.com/products/semiconductor/ FGW25N120W Discrete IGBT (High-Speed V series) 1200V / 25A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Discrete IGBT Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Symbols VCES VGES IC@25 IC@100 ICP - Short Circuit Withstand Time tSC IGBT Max.