Datasheet4U Logo Datasheet4U.com

2SK3990-01SJ - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3990-01SJ datasheet PDF (2SK3990-01L included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel silicon power mosfet.

Features

  • High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3990-01L-Fuji.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • 2SK399 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK399 - Silicon N-Channel MOSFET (Hitachi)
  • 2SK3991 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK3992 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK3993 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK3994 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3995 - Silicon N-Channel MOSFET (Panasonic)
  • 2SK3900 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK3900-ZP - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3901 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
Other Datasheets by Fuji

Full PDF Text Transcription

Click to expand full text
2SK3990-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Symbol VDS VDSX ID ID(puls] VGS IAR Ratings 600 600 3.0 ±12.0 ±30 3.
Published: |