K2769 - N-channel MOS-FET

Fuji Electric

Key Features

High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Outline Drawing >.

K2769 n-channel mos-fet by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	K2769
Manufacturer	Fuji Electric
File Size	296.17 KB
Description	N-channel MOS-FET
Datasheet	K2769 Datasheet

Full PDF Text Transcription for K2769 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2769. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com 2SK2769-01MR FAP-IIS Series N-channel MOS-FET 900V 5,5Ω 3,5A 40W > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving ...

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Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max.

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