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TP858C12R - Schottky Barrier Diode

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http://www.fujisemi.com TP858C12R Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Repetitive peak reverse voltage Average output current Non-repetitive forward surge current** Operating junction temperature Storage temperature Note* Out put current of center tap full wave connection. Note** Rating per element FUJI Diode Symbols VRRM Io IFSM Tj Tstg Conditions 50Hz square wave duty =1/2 Tc =106˚C Sine wave, 10ms 1shot - Ratings 120 30* 110 150 -40 to +150 Units V A A ˚C ˚C Electrical characteristics Item Forward voltage*** Reverse current*** Thermal resistance Note*** Rating per element (at Ta=25˚C unless otherwise specified.) Symbols VF IR Rth(j-c) IF = 15 A VR =VRRM Junction to case Conditions Maximum 1.