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K3679-01MR - 2SK3679-01MR

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof.

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Full PDF Text Transcription for K3679-01MR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3679-01MR. For precise diagrams, and layout, please refer to the original PDF.

2SK3679-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200304 Super FAP-G Series Features High speed switching Low on-resistance No s...

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uper FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 900 V 900 Equivalent A Continuous drain current ±9 A Pulsed drain current ±36 V Gate-source voltage ±30 A Repetitive or non-repetitive 9 mJ Maximum Avalanche Energy 287.7 kV/µs Maximum Drain-Source dV/dt 40 Peak Diode Recovery dV/dt 5 kV/µs Gate(G) Max. power dissipation 2.

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