Full PDF Text Transcription for K3469-01MR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3469-01MR. For precise diagrams, and layout, please refer to the original PDF.
2SK3469-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICO...
View more extracted text
secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 500 V Continuous drain current ID ±12 A Pulsed drain current ID(puls] ±48 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 12 A Maximum Avalanche Energy EAS *1 217 mJ Maximum Drain-Source dV/dt dVDS/dt 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max. power diss
K3469-01MR Datasheet
