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K2761 - N-channel MOS-FET

Key Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Outline Drawing >.

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Full PDF Text Transcription for K2761 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2761. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com 2SK2761-01MR FAP-IIS Series N-channel MOS-FET 600V 1Ω 10A 50W > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Pow...

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eed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max.