High speed switching Low on-resistance www. datasheet4u. com No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
2.54.
Full PDF Text Transcription for K2642-01MR (Reference)
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K2642-01MR. For precise diagrams, and layout, please refer to the original PDF.
2SK2642-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance www.datasheet4u.com No secondary breakdown Low driving power High voltage VGS...
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asheet4u.com No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof FUJI POWER MOS-FET TO-220F15 2.54 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source Equivalent circuit schematic Drain(D) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 ±15 ±60 ±35 88.7 50 +150
K2642-01MR Datasheet
