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K2101 - 2SK2101

Key Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Outline Drawing >.

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Full PDF Text Transcription for K2101 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2101. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com 2SK2101-01MR FAP-IIA Series N-channel MOS-FET 800V 2,1Ω 6A 50W > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Po...

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peed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.