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FMV20N60S1 - N-CHANNEL SILICON POWER MOSFET

General Description

Drain-Source Voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current IDP Gate-Source Voltage VGS Characteristics 600 600 ±20 ±12.6 ±60 ±30 Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Pea

Key Features

  • Pb-free lead terminal RoHS compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FMV20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current IDP Gate-Source Voltage VGS Characteristics 600 600 ±20 ±12.6 ±60 ±30 Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.