FMH21N50ES - N-CHANNEL SILICON POWER MOSFET

Product Overview

Fuji Electric

Datasheet Details

Part number	FMH21N50ES
Manufacturer	Fuji Electric
File Size	604.95 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMH21N50ES Datasheet
Additional preview pages of the FMH21N50ES datasheet.

Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 500 500 ±21 ±84 ±30 21 714.5 28.5 5.7 100 2.50 285 150 -55 to + 150 Unit V V A

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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Published: Mar 7, 2012 |