The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
FGZ75XS65C
Discrete IGBT (XS-series) 650V / 75A
Features Low power loss Low switching surge and noise High reliability, high ruggedness
Applications Uninterruptible power supply PV Power coditionner Inverter welding machine
http://www.fujielectric.com/products/semiconductor/ Discrete IGBT
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified)
Parameter Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Symbol VCES
VGES
IC@25 IC@100 ICP
Turn-Off Safe Operating Area
-
Diode Forward Current
IF@25 IF@100
Diode Pulsed Current
IFP
IGBT Max. Power Dissipation
Ptot_IGBT
FWD Max.
FGZ75XS65C Datasheet
