FGW60N65WE - Discrete IGBT

Product Overview

Fuji Electric

Datasheet Details

Part number	FGW60N65WE
Manufacturer	Fuji Electric
File Size	642.16 KB
Description	Discrete IGBT
Datasheet	FGW60N65WE Datasheet
Additional preview pages of the FGW60N65WE datasheet.

Product details

Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 60mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 60A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Coes VGE=0V Reverse Transfer Capacitance Cres f=1MHz VCC = 520V Gate Charge QG IC = 60A Turn-On Delay Time Rise Ti

Features

Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Published: Apr 9, 2025 |