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2SK3924-01SJ - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3924-01SJ datasheet PDF. This datasheet also covers the 2SK3924-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3924-01L-FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3924-01SJ N-Channel MOSFET Transistor Inchange Semiconductor
2SK3924-01S N-Channel MOSFET Transistor Inchange Semiconductor
2SK3924-01L N-Channel MOSFET Transistor Inchange Semiconductor
2SK3920-01 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3921-01L N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Fuji Electric

Part Number Description
2SK3924-01S N-CHANNEL SILICON POWER MOSFET
2SK3924-01L N-CHANNEL SILICON POWER MOSFET
2SK3920-01 N-CHANNEL SILICON POWER MOSFET
2SK3921-01L N-CHANNEL SILICON POWER MOSFET
2SK3921-01S N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription

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2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings (mm) 200406 See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 250 V Equivalent circuit schematic Drain(D) VDSX 220 V VGS=-30V Continuous Drain Current ID 14 A Pulsed Drain Current ID(puls] ±56 A Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recove
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