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2SK3688-01S - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3688-01S datasheet PDF. This datasheet also covers the 2SK3688-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200509 N-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3688-01L_FujiElectric.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fuji Electric

Part Number Description
2SK3688-01SJ N-CHANNEL SILICON POWER MOSFET
2SK3688-01L N-CHANNEL SILICON POWER MOSFET
2SK3680-01 N-CHANNEL SILICON POWER MOSFET
2SK3681-01 N-CHANNEL SILICON POWER MOSFET
2SK3682-01 N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3688-01L,S,SJ Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 600 Continuous drain current ±16 Pulsed drain current ±64 Gate-source voltage ±30 Repetitive or non-repetitive 16 Maximum avalanche energy 242.7 Maximum drain-source dV/dt 20 Peak diode recovery dV/dt 5 1.67 Max. power dissipation 270 Operating and storage Tch +150 temperature range Tstg -55 to +150 Isolation voltage VISO 2 *1 L=1.
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