Datasheet4U Logo Datasheet4U.com

2SK3678-01 - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3678-01 N-Channel MOSFET Transistor Inchange Semiconductor
2SK367 N-Channel MOSFET Toshiba Semiconductor
2SK3670 Silicon N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor
2SK3673-01MR N-Channel MOSFET Transistor Inchange Semiconductor
2SK3674-01L N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Fuji Electric

Part Number Description
2SK3673-01MR N-CHANNEL SILICON POWER MOSFET
2SK3674-01JS Power MOSFET
2SK3674-01L Power MOSFET
2SK3674-01S Power MOSFET
2SK3675-01 N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3678-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications www.DataSheet4U.com Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 900 VDSX *5 900 ID ±9 ID(puls] ±36 VGS ±30 IAR *2 9 EAS *1 287.
Published: |