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2SK3609-01 - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof.

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2SK3609-01 FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C Ratings Unit V 200 V 170 A Continuous drain current ±18 A ±2.7 ** A Pulsed drain current ID(puls] ±72 V Gate-source voltage VGS ±30 A Non-repetitive Avalanche current IAS *2 18 mJ Maximum Avalanche Energy EAS *1 125.5 kV/µs Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 Max.
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