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2SK3608-01L - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3608-01L datasheet PDF. This datasheet also covers the 2SK3608-01S variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3608-01S_FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3608L N-Channel MOSFET Transistor Inchange Semiconductor
2SK3608S N-Channel MOSFET Transistor Inchange Semiconductor
2SK360 N-Channel MOSFET Hitachi Semiconductor
2SK3600L N-Channel MOSFET Transistor Inchange Semiconductor
2SK3600S N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Fuji Electric

Part Number Description
2SK3608-01S N-CHANNEL SILICON POWER MOSFET
2SK3608-01SJ N-CHANNEL SILICON POWER MOSFET
2SK3600-01L N-CHANNEL SILICON POWER MOSFET
2SK3600-01S N-CHANNEL SILICON POWER MOSFET
2SK3600-01SJ N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription

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2SK3608-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
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