Datasheet4U Logo Datasheet4U.com

2SK3605-01 - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK360 N-Channel MOSFET Hitachi Semiconductor
2SK3600L N-Channel MOSFET Transistor Inchange Semiconductor
2SK3600S N-Channel MOSFET Transistor Inchange Semiconductor
2SK3602-01 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3603-01MR N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Fuji Electric

Part Number Description
2SK3600-01L N-CHANNEL SILICON POWER MOSFET
2SK3600-01S N-CHANNEL SILICON POWER MOSFET
2SK3600-01SJ N-CHANNEL SILICON POWER MOSFET
2SK3601-01 N-CHANNEL SILICON POWER MOSFET
2SK3602-01 N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3605-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Ratings 150 120 ±23 ±3.1 ** ±92 ±30 23 130.9 20 5 105 2.
Published: |