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2SK2908-01S - N-channel MOS-FET

Features

  • High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 600V 1,2Ω ±9A 60W > Outline Drawing >.

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2SK2908-01L,S FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 600V 1,2Ω ±9A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AV PD T ch T stg Rating 600 ±9 ±32 ±35 9 144.4 60 150 -55 ~ +150 L=3.
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