Datasheet4U Logo Datasheet4U.com

2SK2907-01R - N-CHANNEL SILICON POWER MOS-FET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-3PF 15.5 ±0.3 ø3.2 ±0.2 5.5 ±0.2 9.3 ±0.3 5.5 ±0.3 3.2 +0.3 2.3 ±0.2 2.1±0.3 1.6 ±0.3 1.1.
  • 0.1 +0.2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2909 N-Channel Silicon MOSFET Sanyo Semicon Device
2SK291 Silicon N-Channel Junction FET Hitachi Semiconductor
2SK2911 N-Channel Silicon MOSFET Sanyo Semicon Device
2SK2912 Silicon N Channel MOS FET Hitachi Semiconductor
2SK2912L Silicon N Channel MOS FET Hitachi Semiconductor

Other Datasheets by Fuji Electric

Part Number Description
2SK2907-01 N-channel MOS-FET
2SK2900-01 N-channel MOS-FET
2SK2901-01L N-CHANNEL SILICON POWER MOS-FET
2SK2901-01S N-CHANNEL SILICON POWER MOS-FET
2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET

Full PDF Text Transcription

Click to expand full text
2SK2907-01R N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-3PF 15.5 ±0.3 ø3.2 ±0.2 5.5 ±0.2 9.3 ±0.3 5.5 ±0.3 3.2 +0.3 2.3 ±0.2 2.1±0.3 1.6 ±0.3 1.1 —0.1 +0.2 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 20 Min 21.5 ±0.3 5.45 ±0.2 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max.
Published: |