2SK2893-01 - N-channel MOS-FET

Fuji Electric

Key Features

High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 4mΩ ±100A 150W > Outline Drawing >.

2SK2893-01 n-channel mos-fet by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	2SK2893-01
Manufacturer	Fuji Electric
File Size	254.70 KB
Description	N-channel MOS-FET
Datasheet	2SK2893-01 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2893-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 4mΩ ±100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Characteristics 30 ±100 ±400 ±16 2536.7 150 150 -55 ~ +150 L=0.