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2SK2872 - N-channel MOS-FET

Key Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 450V 1,2Ω ±8A 30W > Outline Drawing >.

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Other Datasheets by Fuji Electric

Part Number Description
2SK2872-01MR N-channel MOS-FET
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2872-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 450V 1,2Ω ±8A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 450 ±8 ±32 ±35 8 164.1 30 150 -55 ~ +150 L=4.