MRF6V4300NBR1 - RF Power Field Effect Transistors

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MRF6V4300NBR1
Manufacturer	Freescale Semiconductor
File Size	810.98 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6V4300NBR1 Datasheet
Additional preview pages of the MRF6V4300NBR1 datasheet.

Product details

Description

Part Number B1 Short Ferrite Bead 2743019447 B2, B3 Long Ferrite Beads 2743021447 C1 47 μF, 25 V, Tantalum Capacitor T491B476M025AT C2, C3 22 μF, 50 V, Chip Capacitors C5750JF1H226ZT C4, C5, C6, C7 1 μF, 100 V, Chip Capacitors C3225JB2A105KT C8, C9, C10 15 nF, 100 V, Chip Capacitors C3225CH2A153JT C11, C12, C13, C14, C15 240 pF, Chip Capacitors ATC100B241JT500XT C16 9.1 pF, Chip Capacitor ATC100B9R1JT500XT C17 15 pF, Chip Capacitor ATC100B150JT500XT C18 51 pF, Chip Capac

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V4300N Rev. 3, 4/2010 MRF6V4300NR1 MRF6V4300NBR1 10--600 MHz, 300 W, 50 V LATER.

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Published: Nov 30, 2008 |