• Part: MMBT5551
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Formosa MS
  • Size: 292.85 KB
Download MMBT5551 Datasheet PDF
Formosa MS
MMBT5551
FEATURES z plementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1. BASE 2. EMITTER - 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 180 160 6 0.6 300 150 -55-150 Units V V V A m W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Input capacitance Noise figure - Pulse...