Datasheet4U Logo Datasheet4U.com

FTK1N60I - N-CHANNEL MOSFET

Download the FTK1N60I datasheet PDF. This datasheet also covers the FTK1N60P variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • RDS(ON) = 9 .6Ω@VGS =10V.
  • Ultra Low gate charge (typical 5.0nC).
  • Low reverse transfer capacitance (CRSS = typical 3.5 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO - 251 TO - 252 P: 1 TO - 220 F: 1 TO - 220F 1.Gate 3 Source.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FTK1N60P-FirstSilicon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FTK1N60I
Manufacturer First Silicon
File Size 215.55 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet FTK1N60I Datasheet

Other Datasheets by First Silicon

Part Number Description
FTK1N60D N-CHANNEL MOSFET
FTK1N60F N-CHANNEL MOSFET
FTK1N60P N-CHANNEL MOSFET
FTK6905P 60V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA FTK1N60P / F / D / I 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 9 .6Ω@VGS =10V * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.