The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL D ATA
2N6517
2N6517 TRANSISTOR (NPN)
FEATURES Complement To 2N6520
L M
C
BC
JA
E G D
H FF
1 23
DIM A B C D E F G H J L M
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.55 MAX 1.00 1.27 0.85 0.45 14.00 _0.50 2.30 0.51 MAX
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 350 350
6 0.