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FIR140N098RG - Power Mosfet

Download the FIR140N098RG datasheet PDF. This datasheet also covers the FIR140N098PG variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Page www.First-semi.com Page 7/7

Key Features

  • Uses split-gate technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product Qualified according to JEDEC criteria.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FIR140N098PG-FirstSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FIR140N098RG
Manufacturer First Semiconductor
File Size 1.68 MB
Description Power Mosfet
Datasheet download datasheet FIR140N098RG Datasheet

Other Datasheets by First Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FIR140N098PG/RG Features Uses split-gate technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product Qualified according to JEDEC criteria Application Motor Drivers UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications VDS RDS(on)@VGS=10V ID 98V 5.2mΩ 140A GDS TO-220AB D G S TO-263 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse Gate-Source voltage Power dissipation TC = 25°C Operating junction and storage temperature @ 2018 Copyright By American First Semiconductor Symbol VDS ID ID pulse EAS VGS Ptot Tj , Tstg Value 98 140 100 480 689 ±20 200 -55...+150 Unit V A mJ V W ℃ REV:1.