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FMS2016QFN-1 - High Power Reflective GaAs SP4T Switch

General Description

The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications.

Key Features

  • 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability.

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Datasheet Details

Part number FMS2016QFN-1
Manufacturer Filtronic
File Size 203.18 KB
Description High Power Reflective GaAs SP4T Switch
Datasheet download datasheet FMS2016QFN-1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet 2.1 FMS2016QFN-1 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high isolation: >29dB at 1.8GHz Very low Insertion loss: 0.65dB at 1.8GHz Very low control current Functional Schematic ANT RF1 RF2 RF3 RF4 Description and Applications: The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for switch applications.