LPS200P70 - PACKAGED LOW NOISE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LPS200P70
Manufacturer	Filtronic Compound Semiconductors
File Size	59.57 KB
Description	PACKAGED LOW NOISE PHEMT
Datasheet	LPS200P70 Datasheet
Additional preview pages of the LPS200P70 datasheet.

Product details

Description

AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate.

Features

S.
0.7 dB Noise Figure at 12 GHz.
12 dB Associated Gain at 12 GHz.
0.6 dB Noise Figure at 2 GHz.
14 dB Associated Gain at 2 GHz.
Low DC Power Consumption LPS200P70.

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Other Datasheets by Filtronic Compound Semiconductors

LPS200 - HIGH PERFORMANCE LOW NOISE PHEMT

Published: Mar 22, 2005 |