LPD200SOT343 - PACKAGED HIGH DYNAMIC RANGE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LPD200SOT343
Manufacturer	Filtronic Compound Semiconductors
File Size	68.03 KB
Description	PACKAGED HIGH DYNAMIC RANGE PHEMT
Datasheet	LPD200SOT343 Datasheet
Additional preview pages of the LPD200SOT343 datasheet.

Product details

Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

S.
0.6 dB Noise Figure at 2 GHz.
15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz.
21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz.
50% Power-Added-Efficiency at 2 GHz.

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Published: Mar 22, 2005 |