LPD200MX - HIGH PERFORMANCE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LPD200MX
Manufacturer	Filtronic Compound Semiconductors
File Size	68.94 KB
Description	HIGH PERFORMANCE PHEMT
Datasheet	LPD200MX Datasheet
Additional preview pages of the LPD200MX datasheet.

Product details

Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

S.
1.0 dB Noise Figure at 1.8 GHz.
15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz.
19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz.
31 dBm IP3 at 1.8 GHz.
60% Power-Added-Efficiency LPD200MX.

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Published: Mar 22, 2005 |