LPD200 - HIGH PERFORMANCE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LPD200
Manufacturer	Filtronic Compound Semiconductors
File Size	30.41 KB
Description	HIGH PERFORMANCE PHEMT
Datasheet	LPD200 Datasheet
Additional preview pages of the LPD200 datasheet.

Product details

Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

Features

S.
21 dBm Output Power at 1-dB Compression at 18 GHz.
12 dB Power Gain at 18 GHz.
1.0 dB Noise Figure at 18 GHz.
55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE.

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Published: Mar 22, 2005 |