LPA6836V - MEDIUM POWER PHEMT WITH SOURCE VIAS

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LPA6836V
Manufacturer	Filtronic Compound Semiconductors
File Size	70.02 KB
Description	MEDIUM POWER PHEMT WITH SOURCE VIAS
Datasheet	LPA6836V Datasheet
Additional preview pages of the LPA6836V datasheet.

Product details

Description

AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 360 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimi

Features

S.
25 dBm Output Power at 1-dB Compression at 18 GHz.
9.5 dB Power Gain at 18 GHz.
55% Power-Added Efficiency.
Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD.

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Other Datasheets by Filtronic Compound Semiconductors

Published: Mar 22, 2005 |