LP7612P70 - PACKAGED HIGH DYNAMIC RANGE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP7612P70
Manufacturer	Filtronic Compound Semiconductors
File Size	61.51 KB
Description	PACKAGED HIGH DYNAMIC RANGE PHEMT
Datasheet	LP7612P70 Datasheet
Additional preview pages of the LP7612P70 datasheet.

Product details

Description

AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate.

Features

S.
20 dBm Output Power at 1-dB Compression at 18 GHz.
7.5 dB Power Gain at 18 GHz.
16 dB Small Signal Gain at 2 GHz.
0.8 dB Noise Figure at 2 GHz LP7612P70.

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Other Datasheets by Filtronic Compound Semiconductors

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Published: Mar 22, 2005 |