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LP6836 - MEDIUM POWER PHEMT

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Part number LP6836
Manufacturer Filtronic Compound Semiconductors
File Size 35.54 KB
Description MEDIUM POWER PHEMT
Datasheet download datasheet LP6836 Datasheet
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AND APPLICATIONS DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 360 µ m Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimi

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