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NDS9959 - Dual N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage T A = 25°C unless otherwise noted NDS9959 50 ± 20 (Note 1a) (Note 1a) Units V V A Drain.

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Datasheet Details

Part number NDS9959
Manufacturer Fairchild
File Size 340.08 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet NDS9959 Datasheet
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Full PDF Text Transcription

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February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V High density cell design for extremely low RDS(ON).
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