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NDS0605 - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching.

Features

  • 0.18A,.
  • 60V. RDS(ON) = 5 Ω @ VGS =.
  • 10 V.
  • Voltage controlled p-channel small signal switch.
  • High density cell design for low RDS(ON).
  • High saturation current DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1).

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Datasheet Details

Part number NDS0605
Manufacturer Fairchild
File Size 185.04 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet NDS0605 Datasheet
Additional preview pages of the NDS0605 datasheet.

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Full PDF Text Transcription

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NDS0605 July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features • −0.18A, −60V.
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