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NDH8447 - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • -4.4A, -30V. RDS(ON) = 0.053 @ VGS = -10V RDS(ON) = 0.095Ω @ VGS = -4.5V High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 SuperSOTTM-8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A =.

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Full PDF Text Transcription

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May 1996 NDH8447 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -4.4A, -30V. RDS(ON) = 0.053 @ VGS = -10V RDS(ON) = 0.095Ω @ VGS = -4.5V High density cell design for extremely low RDS(ON).
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