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NDH834P - P-Channel MOSFET

Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • -5.6 A, -20 V. RDS(ON) = 0.035 Ω @ VGS = -4.5 V RDS(ON) = 0.045 Ω @ VGS = -2.7V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gat.

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May 1997 NDH834P P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.6 A, -20 V. RDS(ON) = 0.035 Ω @ VGS = -4.5 V RDS(ON) = 0.045 Ω @ VGS = -2.7V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
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