G20N60B3D Datasheet 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Manufacturer: Fairchild (now onsemi)

Overview: HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the.

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Datasheet Details

Part number	G20N60B3D
Manufacturer	Fairchild (now onsemi)
File Size	179.53 KB
Description	40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Download	G20N60B3D Download (PDF)

Key Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching.

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