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TIP105/TIP106/TIP107 — PNP Epitaxial Silicon Darlington Transistor
TIP105/TIP106/TIP107
PNP Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102
Equivalent Circuit C
B
1 TO-220 1.Base 2.Collector 3.Emitter
R1
R1 @ 10kW R2 @ 0.