Datasheet4U Logo Datasheet4U.com

SSU4N60B - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

📥 Download Datasheet

Datasheet preview – SSU4N60B

Datasheet Details

Part number SSU4N60B
Manufacturer Fairchild Semiconductor
File Size 664.43 KB
Description N-Channel MOSFET
Datasheet download datasheet SSU4N60B Datasheet
Additional preview pages of the SSU4N60B datasheet.

📁 Similar Datasheet

  • SSU40N01 - N-Channel MOSFET (SeCoS)
  • SSU40P06-C - P-Channel Enhancement Mode Power MOSFET (SeCoS)
  • SSU04N65 - N-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SSU07N65SL - N-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SSU102N08S-C - N-Channel MOSFET (SeCoS)
  • SSU12N70H-C - N-Channel Super Junction Power MOSFET (SeCoS)
  • SSU130N06S-C - N-Ch Enhancement Mode Power MOSFET (SeCoS)
  • SSU130N06SV-C - N-Channel Shielded Gate Trench Power MOSFET (SeCoS)
  • SSU24N60H-C - N-Channel Super Junction Power MOSFET (SeCoS)
  • SSU3055A - ADVANCED POWER MOSFET (Samsung semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SSR4N60B / SSU4N60B November 2001 SSR4N60B / SSU4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • 2.8A, 600V, RDS(on) = 2.
Published: |