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SSR1N50B - 520V N-Channel MOSFET

Download the SSR1N50B datasheet PDF. This datasheet also covers the SSR-1N5 variant, as both devices belong to the same 520v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 1.3A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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  • G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSR-1N5-0B.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (onsemi)

Part Number Description
SSR1N50A N-CHANNEL POWER MOSFET
SSR1N60A Advanced Power MOSFET
SSR1N60B 600V N-Channel MOSFET
SSR2N60A Advanced Power MOSFET
SSR2N60B 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features • • • • • • 1.3A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.
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