Datasheet4U Logo Datasheet4U.com

SSH45N20A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.054 Ω (Typ. ) SSH45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 45 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100oC) Drai.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSH40N15 N-CHANNEL POWER MOSFET Samsung semiconductor
SSH40N20 N-CHANNEL POWER MOSFET Samsung semiconductor
SSH4N70 (SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS Samsung semiconductor
SSH4N80 (SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS Samsung semiconductor
SSH10N60A advanced power MOSFET Fairchild

Other Datasheets by Fairchild (onsemi)

Part Number Description
SSH45N20B 200V N-Channel MOSFET
SSH10N80A N-CHANNEL POWER MOSFET
SSH10N90A N-CHANNEL POWER MOSFET
SSH22N50A Advanced Power MOSFET
SSH25N40A Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.054 Ω (Typ.) SSH45N20A BVDSS = 200 V RDS(on) = 0.065 Ω ID = 45 A TO-3P 1 2 3 1.Gate 2. Drain 3.
Published: |