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SGU20N40L - High input impedance

General Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure.

They also have wide noise immunity.

Key Features

  • High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20N40L.

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SGR20N40L / SGU20N40L August 2001 IGBT SGR20N40L / SGU20N40L General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications Features • • • • • High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20N40L Application Strobe flash.