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SFWI9540 - Advanced Power MOSFET

Key Features

  • n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max. ) @ VDS = -100V n Low RDS(ON) : 0.161 Ω (Typ. ) 1 SFW/I9540 BVDSS = -100 V RDS(on) = 0.2 Ω ID = -17 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.161 Ω (Typ.) 1 SFW/I9540 BVDSS = -100 V RDS(on) = 0.2 Ω ID = -17 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3.