SFF9250L - Advanced Power MOSFET

Features

• ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max. ) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ. ) SFF9250L BVDSS = -200 V RDS(on) = 0.23 Ω ID = -12.6 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 °.